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1. Y. Ando and T. Itoh, “Calculation of transmission tunneling current across arbitrary potential barriers,“ Journal of Applied Physics vol. 61, pp. 1497-1502, Feb. 1987.
2. T. Ando and S. Mori. “Effective-mass theory of semiconductor heterojunctions and superlattices.” Surface Science., vol. 113, pp. 124-130, 1982.
Quantum mechanical reflection at triangular ``planar-doped'' potential barriers for transistors, Chandra, Amitabh; Eastman, Lester F., J. Appl. Phys. 53, 9165 (1982)
Analytical formula of the transmission probabilities across arbitrary potential barriers, Ying He et al 2005 J. Phys. A: Math. Gen. 38 5771-5780
Modified Airy function method for the analysis of tunnelingproblems in optical waveguides and quantum-well structures
Roy, S.; Ghatak, A.K.; Goyal, I.C.; Gallawa, R.L.
IEEE Journal of Quantum Electronics
Volume 29, Issue 2, Feb 1993 Page(s):340 - 345
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الرجاء مساعدتي بهذه المقالة العلمية
1/1Towards a circuit theory for metallic single-electron tunnelling devices
International Journal of Circuit Theory and Applications
Volume 35, Issue 3, Date: May/June 2007, Pages: 213-238
J. Hoekstra
2/ Can single-electron integrated circuits and quantum computers be fabricated in silicon?
International Journal of Circuit Theory and Applications
Volume 28, Issue 6, Date: November/December 2000, Pages: 553-562
J. R. Tucker, T.-C. Shen
3/On the impulse circuit model for the single-electron tunnelling junction
International Journal of Circuit Theory and Applications
Volume 32, Issue 5, Date: September/October 2004, Pages: 303-321
Jaap Hoekstra
4/Simulation of single-electron logic circuits
Electronics and Communications in Japan (Part II: Electronics)
Volume 77, Issue 9, Date: September 1994, Pages: 65-73
Nobuhiro Kuwamura, Kenji Taniguchi, Chihiro Hamaguchi
5/Nanoelectronic single-electron transistor circuits and architectures
International Journal of Circuit Theory and Applications
Volume 32, Issue 5, Date: September/October 2004, Pages: 323-338
C. P. Gerousis, S. M. Goodnick, W. Porod
from: http://www3.interscience.wiley.com
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Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures
http://link.aip.org/link/?APPLAB/53/995/1
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الرجاء مساعدتي بهذه المقالات العلمية
1/Single electron memory devices utilizing Al2O3 tunnel oxide barriers
Source: J. Vac. Sci. Technol. B 22, 3119 (2004);
http://dx.doi.org/10.1116/1.1821506
2/ Single electron memory devices: Toward background charge insensitive operation
Source: J. Vac. Sci. Technol. B 21, 2860 (2003);
http://dx.doi.org/10.1116/1.1625957
3/Room temperature nanocrystalline silicon single-electron transistors
Y. T. Tan, T. Kamiya, Z. A. K. Durrani, and H. Ahmed
http://link.aip.org/link/?JAPIAU/94/633/1
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