المصدر: Simulation of Transport in Nanodevices - 2017 - في منتدى : قسم الفيزياء Simulation of Transport in Nanodevices François Triozon (Editor), Philippe Dollfus (Editor) Wiley-ISTE | MEMS | January 2017 | ISBN-10: 1848215665 | 396 pages | pdf | 16.5 mb Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity. هذا المحتوى يظهر للاعضاء المسجلين فقط: هذا المحتوى يظهر للاعضاء المسجلين فقط:
