المصدر: Advanced Semiconducting Materials and Devices في منتدى : قسم الفيزياء Advanced Semiconducting Materials and Devices K.M. Gupta, Nishu Gupta (auth.) Springer International Publishing, 2016, 573 Pages English, Format PDF 19 MB (19435393 bytes) ISBN 978-3-319-19758-6 Web This book presents the latest developments in semiconducting materials and devices, providing up-to-date information on the science, processes, and applications in the field. A wide range of topics are covered, including optoelectronic devices, metal–semiconductor junctions, heterojunctions, MISFETs, LEDs, semiconductor lasers, photodiodes, switching diodes, tunnel diodes, Gunn diodes, solar cells, varactor diodes, IMPATT diodes, and advanced semiconductors. Detailed attention is paid to advanced and futuristic materials. In addition, clear explanations are provided of, for example, electron theories, high-field effects, the Hall effect, transit-time effects, drift and diffusion, breakdown mechanisms, equilibrium and transient conditions, switching, and biasing. The book is designed to meet the needs of undergraduate engineering students and will also be very useful for postgraduate students; it will assist in preparation for examinations at colleges and universities and for other examinations in engineering. Practice questions are therefore presented in both essay and multiple choice format, and many solved examples and unsolved problems are included. Table of contents : Front Matter....Pages i-xlii Front Matter....Pages 1-1 Semiconductor Materials: Their Properties, Applications, and Recent Advances....Pages 3-40 Overview of Crystals, Bonding, Imperfections, Atomic Models, Narrow and Wide Bandgap Semiconductors and, Semiconductor Devices....Pages 41-85 Carrier Transport in Semiconductors....Pages 87-144 Excess Carriers in Semiconductors....Pages 145-189 Front Matter....Pages 191-191 P-N Junctions and Their Breakdown Mechanisms....Pages 193-234 Different Types of Diodes, Ideal and Real Diodes, Switching Diodes, Abrupt and Graded Junctions....Pages 235-259 Front Matter....Pages 261-261 Majority Carrier Diodes (Tunnel Diode, Backward Diode, Schottky Barrier Diode, Ohmic Contacts, and Heterojunctions)....Pages 263-283 Microwave Diodes (Varactor Diode, p-i-n Diode, IMPATT Diode, TRAPATT Diode, BARITT Diode, etc.)....Pages 285-309 Optoelectronic Devices....Pages 311-350 Front Matter....Pages 351-351 Bipolar Junction Transistors....Pages 353-383 Metal Semiconductor Field Effect Transistors, MOS Transistors, and Charge Coupled Device....Pages 385-414 Power Semiconductor Devices....Pages 415-442 Front Matter....Pages 443-443 Semiconductor Growth Techniques and Device Fabrication....Pages 445-473 Front Matter....Pages 475-475 Special Semiconducting Materials in Vivid Fields (for Thermoelectrics, Integrated Circuits, Photocatalytics, Spintronic Devices, etc.), Plasmonic Solar Cell, and Photonics....Pages 477-507 Nano-Structured Semiconducting Materials and Devices....Pages 509-530 Recent Advances in Semiconducting Materials and Devices....Pages 531-562 Back Matter....Pages 563-573 هذا المحتوى يظهر للاعضاء المسجلين فقط: هذا المحتوى يظهر للاعضاء المسجلين فقط:
