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By
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Device Applications of Silicon Nanocrystals and Nanostructures
by
Nobuyoshi Koshida
By
Publisher Springer US
ISSN 1571-5744
Copyright 2009
ISBN 978-0-387-78688-9
Copyright 2009
ISBN 978-0-387-78688-9
Preface
Semiconductors exhibit a critical size at which quantum confinement effects
become apparent. A measure of this condition is the exciton Bohr radius. This value
in single-crystalline silicon is below 5 nm, which is exceptionally small in comparison
to most conventional semiconductors, and is one reason why the development
of silicon-based logic and memory devices has followed an anticipated road map.
In fact, however, silicon devices have evolved in all stages of the design, processing,
and fabrication technologies. The scaling principle is the engine driving these
advances in integrated circuitry.
The scaling of advanced MOS technology is now entering the region of 10 nm.
As the scaling extends to the region below the quantum-size criterion, it should be
noted that the original optical, electrical, thermal, and chemical properties of bulk silicon
are substantially modified. As a consequence, various useful functions are
induced in quantum-sized nanocrystalline or nanostructured silicon materials. For
instance, a significant band gap widening and delocalization of carriers in momentum
space make the optical property free from the traditional direct or indirect-transition
regime. Efficient visible luminescence is created and opens the door toward integrated
silicon photonics. In addition, the range of possible applications in quantumsized
silicon is extending to the field of electronics, acoustics, and biology.
The main theme of this book is how widely the potential functions of silicon
have been implemented as devices in the nanometer region, and that silicon devices
in the quantum zone produce various technological values different from the scaling
merits. The volume is composed of three main subjects: photonic devices (four
chapters), electronic devices (five chapters), and functional devices (twochapters).
become apparent. A measure of this condition is the exciton Bohr radius. This value
in single-crystalline silicon is below 5 nm, which is exceptionally small in comparison
to most conventional semiconductors, and is one reason why the development
of silicon-based logic and memory devices has followed an anticipated road map.
In fact, however, silicon devices have evolved in all stages of the design, processing,
and fabrication technologies. The scaling principle is the engine driving these
advances in integrated circuitry.
The scaling of advanced MOS technology is now entering the region of 10 nm.
As the scaling extends to the region below the quantum-size criterion, it should be
noted that the original optical, electrical, thermal, and chemical properties of bulk silicon
are substantially modified. As a consequence, various useful functions are
induced in quantum-sized nanocrystalline or nanostructured silicon materials. For
instance, a significant band gap widening and delocalization of carriers in momentum
space make the optical property free from the traditional direct or indirect-transition
regime. Efficient visible luminescence is created and opens the door toward integrated
silicon photonics. In addition, the range of possible applications in quantumsized
silicon is extending to the field of electronics, acoustics, and biology.
The main theme of this book is how widely the potential functions of silicon
have been implemented as devices in the nanometer region, and that silicon devices
in the quantum zone produce various technological values different from the scaling
merits. The volume is composed of three main subjects: photonic devices (four
chapters), electronic devices (five chapters), and functional devices (twochapters).
LinK