مساعدة في تأمين بعض الأبحاث

kh_hama

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أرجو المساعدة في تأمين كل من الأبحاث التالية
1:
Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys
http://onlinelibrary.wiley.com/doi/10.1002/pssc.201100256/abstract

2:
Characteristics of Semiconductor Alloy GaAs1-xBix
http://jjap.jsap.jp/link?JJAP/41/2801/
3:
Temperature-insensitive photoluminescence emission wavelength in GaAs1–xBix/GaAs multiquantum wells

http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000520/abstract
4:
Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates
http://www.sciencedirect.com/science/article/pii/S0026269208002814
5:
Bismide-alloys for higher efficiency infrared semiconductor lasers
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5642728&abstractAccess=no&userType=inst

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الأخ علاء هلا تفضلت وساعدتني بتأمين المقالات التالية​

· Growth and characterization of GaBiAs epilayers
http://www.sciencedirect.com/science/article/pii/S0925346707000742
· Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction
http://www.sciencedirect.com/science/article/pii/S0167931710004296
· Structural and electronic properties of GaAsBi
http://www.sciencedirect.com/science/article/pii/S0749603608000931
· Kinetically-limited growth of GaAsBi by molecular-beam epitaxy
http://www.sciencedirect.com/science/article/pii/S0022024811008967
· Bismuth alloying in GaAs: a first-principles study
http://www.sciencedirect.com/science/article/pii/S0927025608000852
· Optimised molecular beam epitaxy growth conditions for GaAsBi/GaAs(100)
http://www.sciencedirect.com/science/article/pii/S0022024811009110

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